參數(shù)資料
型號(hào): 2SC3332
廠(chǎng)商: Sanyo Electric Co.,Ltd.
英文描述: NPN Epitaxial Planar Silicon Transistor for High-Voltage Switching Application(高電壓轉(zhuǎn)換應(yīng)用的NPN硅外延平面型晶體管)
中文描述: 瑞展硅晶體管的高壓開(kāi)關(guān)應(yīng)用(高電壓轉(zhuǎn)換應(yīng)用的npn型硅外延平面型晶體管)
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 114K
代理商: 2SC3332
71598HA (KT)/3207KI/N257KI/3135KI/O183KI, TS No.1334-1/3
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1319/2SC3332
High-Voltage Switching Applications
Ordering number:EN1334C
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
y
t
U
n
m
p
x
a
m
1
1
0
4
t
e
C
e
C
n
G
f
C
f
C
t
e
C
r
r
m
C
D
e
C
E
I
I
hF1
hF2
fT
Cb
o
s
E
C
O
O
B
B
C
E
VB
C
VB
E
VE
C
VE
C
VE
C
VB
C
IC
=
I
V
I
V
I
V
I
V
I
V
0
V
0
A
m
0
0
2
1
=
4
=
5
=
5
=
1
=
1
=
2
E0
=
=
1
=
1
=
5
=
A
A
μ
μ
t
C0
C
C
C
A
m
A
m
0
m
0
0
0
*
0
0
8
0
1
*
0
t
u
t
o
S
d
o
P
p
O
r
m
h
w
s
a
B
E
d
n
n
a
o
B
m
-
e
C
n
G
o
C
A
0
2
1
8
)
1
z
H
F
p
M
e
c
n
a
V
a
a
n
p
a
C
e
m
1
2
e
g
V
)
I
5
B
A
m
5
2
=
2
5
)
4
2
V
e
g
a
V
n
w
w
o
d
V
n
w
n
o
k
o
S
e
B
e
B
r
m
e
B
e
s
e
e
r
m
B
E
a
B
m
i
m
i
E
-
s
-
e
C
-
e
C
-
m
E
O
-
T
g
a
S
a
B
V
)
B
C
E
C
)
B
E
)
R
tn
o
tg
s
E
)
R
R
B
B
(
B
B
(
IC
IC
IC
IE
S
S
I
A
I
A
R
,
A
I
A
μ
e
e
e
e
p
m
0
μ
5
0
m
0
2
=
1
=
1
=
1
=
s
e
e
e
e
B
=
A
m
5
2
=
8
V
V
V
V
n
e
g
a
V
V
n
a
d
a
o
k
a
e
d
k
s
a
V
V
V
O
O
O
(
E0
E
C0
=
T
d
T
d
0
0
8
6
1
1
e
g
a
e
g
B=
a
6
N
e
t
t
c
C
c
C
t
e
t
e
p
0
5
0
9
0
1
6
6
6
s
s
)
0
0
s
n
e
m
i
l
F
* : The 2SA1319/2SC3332 are classified by 100mA h
FE
as follows :
tf
t
c
C
t
e
T
d
e
e
p
s
e
e
S
0
s
n
( ) : 2SA1319
Specifications
Absolute Maximum Ratings
at Ta = 25C
Electrical Characteristics
at Ta = 25C
Package Dimensions
unit:mm
2003A
[2SA1319/2SC3332]
Features
· Hgih breakdown voltage.
· Excellent h
FE
linearity.
· Wide ASO and highly resistant to breakdown.
· Adoption of MBIT process.
Switching Test Circuit
JEDEC : TO-92
EIAJ : SC-43
SANYO : NP
B : Base
C : Collector
E : Emitter
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
t
U
e
g
a
V
V
a
V
t
e
C
t
e
C
o
p
s
D
e
p
m
e
T
e
p
m
e
T
e
s
r
m
e
s
a
B
E
a
-
e
C
-
e
C
-
m
E
r
e
C
r
e
C
r
e
C
o
n
u
J
g
a
S
V
V
V
O
O
O
B
E
B
C
C
E
IC
IP
C
PC
j
g
T
0
0
8
6
1
1
V
V
V
A
A
W
m
C
C
e
g
a
e
g
B
6
7
5
7
1
1
+
o
)
s
P
n
(
0
0
0
0
5
5
n
e
5
5
0
0
2
R
0
0
1
0
8
2
S
0
4
1
0
0
4
T
0
0
2
(For PNP, the polarity is reversed)
Unit (resistance :
, capacitance : F)
相關(guān)PDF資料
PDF描述
2SC3338 Silicon NPN Epitaxial
2SC3358 NPN SILICON PLANAR EPITAXIAL TRANSISTOR
2SC3365 Silicon NPN Triple Diffused
2SC3365 Power Bipolar Transistors
2SC3377 2SC2673
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC3332_11 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:High-Voltage Switching Applications
2SC3332R 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC3332R-AA 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC3332S 功能描述:兩極晶體管 - BJT BIP NPN 0.7A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC3332S-AA 功能描述:兩極晶體管 - BJT BIP NPN 0.7A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2