參數(shù)資料
型號: 2SC3307
元件分類: 功率晶體管
英文描述: 10 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝: LEAD FREE, 2-21F1A, 3 PIN
文件頁數(shù): 1/5頁
文件大小: 186K
代理商: 2SC3307
2SC3307
2006-11-09
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC3307
High-Speed and High-Voltage Switching Applications
Switching Regulator Applications
High-Speed DC-DC Converter Applications
Excellent switching times: tr = 1.0 s (max), tf = 1.0 s (max)
(IC = 5 A)
High collector breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
900
V
Collector-emitter voltage
VCEO
800
V
Emitter-base voltage
VEBO
7
V
DC
IC
10
Collector current
Pulse
ICP
15
A
Base current
IB
3
A
Collector power dissipation
(Tc = 25°C)
PC
150
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
相關PDF資料
PDF描述
2SC3311AQ 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC3311AS 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC3311Q 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC3311 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC3312T 100 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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