參數(shù)資料
型號(hào): 2SC3263
廠商: SANKEN ELECTRIC CO LTD
元件分類: 功率晶體管
英文描述: Silicon NPN Epitaxial Planar Transistor(硅NPN外延平面晶體管)
中文描述: 15 A, 230 V, NPN, Si, POWER TRANSISTOR
封裝: MT-100, TO-3P, 3 PIN
文件頁(yè)數(shù): 1/1頁(yè)
文件大?。?/td> 24K
代理商: 2SC3263
63
Silicon NPN Epitaxial Planar Transistor
(Complement to type 2SA1294)
Application :
Audio and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3263
230
230
5
15
4
130(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
h
FE
Rank
2SC3263
100
max
100
max
230
min
50
min
2.0
max
60
typ
250
typ
Unit
μ
A
μ
A
V
V
MHz
pF
Conditions
V
CB
=230V
V
EB
=5V
I
C
=25mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=0.5A
V
CE
=12V, I
E
=–2A
V
CB
=10V, f=1MHz
LAPT
2S C3263
(Ta=25°C)
(Ta=25°C)
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0
3
2
1
0
0.5
1.0
2.0
1.5
Base Current I
B
(A)
C
C
(
I
C
=10A
5A
0
15
10
5
0
2
1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
15CCs ep
–0CCsTm)
0.1
1
3
0.5
1
10
100
1000
2000
Time t(ms)
T
θ
j
(
130
100
50
3.5
0
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
0
25
50
75
100
125
150
3
10
100
300
0.1
1
0.5
10
40
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
10ms
DC
Without Heatsink
Natural Cooling
0.02
0.1
1
0.5
10
5
15
10
50
100
200
Collector Current I
C
(A)
D
F
(V
CE
=4V)
Typ
0
0
5
15
10
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
1.0A
1.5A
2.0A
30A
600mA
400mA
200mA
100mA
50mA
I
B
=20mA
(V
CE
=4V)
Collector Current I
C
(A)
0.02
0.5
1
5
10
0.1
15
D
F
10
50
100
200
125C
25C
–30C
0
–0.1
–1
–10
20
40
60
100
80
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
60
R
L
(
)
12
I
C
(A)
5
V
(V)
–5
I
(mA)
–500
t
on
(
μ
s)
0.30typ
t
stg
(
μ
s)
2.40typ
t
f
(
μ
s)
0.50typ
I
(mA)
500
V
(V)
10
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
1
±
4
2
5
±
1
3.2
±0.1
2
3
1.05
+0.2
-0.1
2
4
B
E
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
O(50 to 100), Y(70 to 140)
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