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參數(shù)資料
| 型號(hào)： | 2SC3052 |
| 廠商： | RECTRON LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 292K |
| 代理商： | 2SC3052 |
RECTRON
SEMICONDUCTOR
FEATURES
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
2SC3052
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
OC ambient temperature unless otherwise specified.
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.003(0.08)
0.006(0.15)
0.110(2.80)
0.019(2.00)
0.071(1.80)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
2006-3
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
Emitter cut-off current (VEB= 6V, IC=0)
DC current gain (VCE= 6V, IC= 1mA)
DC current gain (VCE= 6V, IB= 0.1mA)
Collector cut-off current (VCB= 50V, IE=0)
Collector-emitter saturation voltage (IC= 100mA, IB= 10mA)
Transition frequency (VCE= 6V, IC= 10mA)
Collector output capacitance (VCE= 6V, IE= 0, f= 1MHZ)
Noise figure (VCE= 6V, IE= -0.1mA, f= 1KHZ, Rg=2KW)
Base - emitter saturation voltage (IC= 100mA, IB= 10mA)
CHARACTERISTICS
SYMBOL
UNITS
-
0.1
800
m
A
m
A
V
pF
MHz
dB
Collector-base breakdown voltage (IC= 100mA, IE=0)
Collector-emitter breakdown voltage (IC= 100mA, IB=0)
Emitter-base breakdown voltage (IE= 100mA, IC=0)
CLASSIFICATION OF hFE(1)
RANK
Range
Marking
E
150-300
250-500
LE
LF
V(BR)CBO
V(BR)CEO
V(BR)EBO
IEBO
hFE
ICBO
VCE(sat)
VBE(sat)
fT
Cob
NF
MAX
50
6
-
50
1
4
15
-
180
-
150
MIN
G
F
400-800
LG
0.055(1.40)
0.047(1.20)
-
0.1
0.3
-
BASE
EMITTER
COLLECTOR
*
Power dissipation
PCM :
0.15
W (Tamb=25OC)
Collector current
ICM :
0.2
A
Collector-base voltage
V(BR)CBO :
50
V
Operating and storage junction temperature range
TJ,Tstg: -55OC to +150OC
1
2
3
2
3
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
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| 2SC3052-F | 200 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3066G(DP6B) | 50 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3066H(DP6B) | 50 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3052_10 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
| 2SC3052_11 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Plastic-Encapsulate Transistor |
| 2SC3052-SOT-23 | 制造商:JIANGSU 制造商全稱:Jiangsu Changjiang Electronics Technology Co., Ltd 功能描述:TRANSISTOR (NPN) |
| 2SC3052-SOT-23-3L | 制造商:JIANGSU 制造商全稱:Jiangsu Changjiang Electronics Technology Co., Ltd 功能描述:TRANSISTOR (NPN) |
| 2SC3053 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
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