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參數(shù)資料
| 型號： | 2SC3004 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 30 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-126MOD, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 32K |
| 代理商： | 2SC3004 |
2SC3004
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
30
V
Emitter to base voltage
V
EBO
7V
Collector current
I
C
3A
Collector peak current
I
C(peak)
4A
Collector power dissipation
P
C*
1
10
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
V
I
C = 0.1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
30
—
V
I
C = 1 mA, RBE = _
Emitter to base breakdown
voltage
V
(BR)EBO
7—
—
V
I
E = 0.1 mA, IC = 0
Collector cutoff current
I
CEO
——20
A
V
CE = 24 V, RBE = _
DC current transfer ratio
h
FE
2000
—
50000
V
CE = 3 V, IC = 1.5 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
—
1.5
V
I
C = 1.5 A, IB = 3 mA*
1
—
2.0
V
I
C = 3 A, IB = 30 mA*
1
Base to emitter saturation
voltage
V
BE(sat)
—
2.0
V
I
C = 1.5 A, IB = 3 mA*
1
—
3.5
V
I
C = 3 A, IB = 30 mA*
1
Turn on time
t
on
—
0.4
—
s
I
C = 1.5 A, IB1 = –IB2 = 3 mA
V
CC = 30 V
Turn off time
t
off
—
1.2
—
s
Storage time
t
stg
—
0.8
—
s
Note:
1. Pulse test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC3006 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS) |
| 2SC3007 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON NPN EPITAXIAL TYPE (PCT PROCESS) |
| 2SC3011 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TRANSISTOR (UHF~C BAND LOW NOISE AMPLIFIER APPLICATIONS) |
| 2SC3012 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC3015 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-5915V .05A .15W EBC SURFACE MT |
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