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參數(shù)資料
| 型號(hào)： | 2SC2954 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
| 中文描述： | NPN硅外延晶體管的微型模具 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 103K |
| 代理商： | 2SC2954 |
2
2SC2954
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
I
CBO
V
CB
= 10 V, I
E
= 0
100
nA
DC Current Gain
h
FE
V
CE
= 10 V, I
C
= 50 mA
*1
30
100
200
Gain Bandwidth Product
f
T
V
CE
= 10 V, I
C
= 50 mA
3.0
4.0
GHz
Feedback Capacitance
C
re
V
CB
= 10 V, Emitter Grounded,
f = 1.0 MHz
1.1
1.8
pF
Insertion Power Gain
S
21
e
2
V
CE
= 10 V, I
C
= 50 mA, f = 500 MHz
R
G
= 50
10
12.5
dB
Noise Figure
NF
V
CE
= 10 V, I
C
= 30 mA, f = 500 MHz
R
G
= 50
2.4
4.0
dB
*1
Pulse Measurement PW 350 s, duty cycle 2 %/Pulsed
TYPICAL CHARACTERISTICS (T
A
= 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
a
-Ambient Temperature-
°
C
0
1.0
2.0
50
100
150
P
T
-
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
BE
-Base to Emitter Voltage-V
0
100
200
0.5
1.0
I
C
-
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
-Collector to Emitter Voltage-V
0
100
200
2
4
6
8
10
I
C
-
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
C
-Collector Current-mA
1
20
30
50
70
100
200
10
10
100 200
h
F
-
Free Air R
th(j-a)
312.5
°
C/W
Ceramic Substrate
16 cm
2
×
0.7 mm
R
th(j-a)
62.5
°
C/W
V
CE
= 10 V
2 mA
1.5 mA
1 mA
I
B
= 500 A
μ
0
V
CE
= 10 V
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