參數(shù)資料
型號(hào): 2SC2883-O
元件分類: 小信號(hào)晶體管
英文描述: 1500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: LEAD FREE, 2-5K1A, SC-62, 3 PIN
文件頁(yè)數(shù): 4/4頁(yè)
文件大?。?/td> 118K
代理商: 2SC2883-O
Data Sheet D13796EJ2V0DS
2
2SK3204
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PARAMATERS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
10
A
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 8 A
8.0
14
S
RDS(on)1
VGS = 10 V, ID = 8 A
25
34
m
Drain to Source On-state Resistance
RDS(on)2
VGS = 4 V, ID = 8 A
35
50
m
Input Capacitance
Ciss
940
pF
Output Capacitance
Coss
290
pF
Reverse Transfer Capacitance
Crss
VDS = 10 V
VGS = 0 V
f = 1 MHz
120
pF
Turn-on Delay Time
td(on)
17
ns
Rise Time
tr
150
ns
Turn-off Delay Time
td(off)
58
ns
Fall Time
tf
VDD = 30 V, ID = 8 A
VGS = 10 V
RG = 10
52
ns
Total Gate Charge
QG
25
nC
Gate to Source Charge
QGS
2.9
nC
Gate to Drain Charge
QGD
VDD = 48 V
VGS(on) = 10 V
ID = 15 A
7.5
nC
Body Diode Forward Voltage
VF(S-D)
IF = 15 A, VGS = 0 V
0.92
V
Reverse Recovery Time
trr
45
ns
Reverse Recovery Charge
Qrr
IF = 15 A, VGS = 0 V
di/dt = 100 A/
s
81
nC
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
RG = 10
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
ID
Wave Form
VGS
ID
10%
0
90%
ID
ton
toff
td(on)
tr
td(off)
tf
10%
5
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