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參數(shù)資料
| 型號(hào)： | 2SC2859-O |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 311K |
| 代理商： | 2SC2859-O |
2SC2859
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial (PCT process)
2SC2859
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
Excellent hFE linearity: hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)
Complementary to 2SA1182.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Base current
IB
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 35 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
hFE (1)
VCE = 1 V, IC = 100 mA
70
400
DC current gain
(Note)
hFE (2)
VCE = 6 V, IC = 400 mA
25
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.25
V
Base-emitter voltage
VBE
VCE = 1 V, IC = 100 mA
0.8
1.0
V
Transition frequency
fT
VCE = 6 V, IC = 20 mA
300
MHz
Collector output capacitance
Cob
VCB = 6 V, IE = 0, f = 1 MHz
7
pF
Note: hFE (1) classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400
hFE (2) classification O: 25 min, Y: 40 min, GR: 70 min
( ) marking symbol
Marking
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2859-O(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRAN NPN 30V 0.5A S-MINI |
| 2SC2859-Y(T5L,M) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC2859Y(TE85L,F) | 制造商:Toshiba 功能描述:NPN |
| 2SC2859-Y(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN S-MINI |
| 2SC2868 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-9280V .1A .4W ECB |
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