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參數(shù)資料
| 型號(hào)： | 2SC2735 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | 2SC2735 |
2SC2735
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
30
V
Collector to emitter voltage
20
V
Emitter to base voltage
3
V
Collector current
50
mA
Collector power dissipation
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
20
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
3
—
—
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
V
CE(sat)
—
—
0.5
μ
A
V
CB
= 10 V, I
C
= 0
I
C
= 20 mA, I
B
= 4 mA
Collector to emitter saturation
voltage
—
—
1.0
V
DC current transfer ratio
h
FE
Cob
40
—
—
V
CE
= 10 V, I
C
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
= 10 V, I
C
= 10 mA
V
CC
= 12 V, I
= 7 mA,
f
OSC
= 300 MHz
V
CC
= 12 V, I
= 7 mA,
f
OSC
= 930 MHz
V
= 12 V, I
C
= 2 mA,
f = 200 MHz,
f
OSC
= 230 MHz (0dBm)
V
= 12 V, I
C
= 2 mA,
f = 200 MHz,
f
OSC
= 230 MHz (0dBm)
Collector output capacitance
—
0.85
1.5
pF
Gain bandwidth product
f
T
V
OSC1
600
1200
—
MHz
Oscillating output voltage
—
210
—
mV
V
OSC2
—
130
—
mV
Conversion gain
CG
—
21
—
dB
Noise figure
NF
—
6.5
—
dB
Note:
Marking is “JC”.
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