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參數(shù)資料
| 型號： | 2SC2716-R |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 346K |
| 代理商： | 2SC2716-R |
2SC2716
2010-02-24
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2716
High Frequency Amplifier Applications
AM High Frequency Amplifier Applications
AM Frequency Converter Applications
Low noise figure: NF = 3.5dB (max) (f = 1 MHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
4
V
Collector current
IC
100
mA
Emitter current
IE
100
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 35 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 4 V, IC = 0
1.0
μA
DC current gain
hFE
(Note)
VCE = 12 V, IC = 2 mA
40
240
Collector-emitter saturation voltage
VCE (sat)
IC = 10 mA, IB = 1 mA
0.4
V
Base-emitter saturation voltage
VBE (sat)
IC = 10 mA, IB = 1 mA
1.0
V
Transition frequency
fT
VCE = 10 V, IC = 2 mA
80
MHz
Reverse transfer capacitance
Cre
VCB = 10 V, IE = 0, f = 1 MHz
2.2
3.0
pF
Collector-base time constant
Ccrbb’
VCB = 10 V, IE = 1 mA, f = 30 MHz
50
ps
Noise figure
NF
VCE = 10 V, IE = 1 mA, f = 1 MHz
Rg = 50 Ω
2.0
3.5
dB
Note: hFE classification R: 40 to 80, O: 70 to 140, Y: 120 to 240
Unit: mm
JEDEC
TO-236
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 12mg (typ.)
S-MINI
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| 2SC2716-Y | 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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| 2SC2719K | 300 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2716-Y(TE85L,F) | 制造商:Toshiba 功能描述:NPN |
| 2SC2717 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANS. TO-9230V .05A .3W BEC |
| 2SC2717(F) | 制造商:Toshiba 功能描述:NPN Cut Tape |
| 2SC2718-Q(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC2718-R | 制造商:Renesas Electronics 功能描述:NPN Bulk |
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