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參數(shù)資料
| 型號： | 2SC2715M |
| 廠商： | 江蘇長電科技股份有限公司 |
| 英文描述： | TRANSISTOR |
| 中文描述： | 晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 130K |
| 代理商： | 2SC2715M |
C
WBFBP-03B
TOP
B E
C
C
BACK
E B
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
2SC2715M
TRANSISTOR
DESCRIPTION
NPN
Epitaxial planar Silicon Transistor
FEATURES
High power gain: G
pe
=27dB(f=10.7MHz)
Recommended for FM IF,OSC Stage and AM CONV.IF Stage
APPLICATION
High Frequency amplifier
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: RR,RO,RY
C
RR
B E
AXIMUM RATINGS* T
A
=25
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current -Continuous
P
C
Collector Dissipation
T
J
Junction Temperature
T
stg
Storage Temperature
℃
unless otherwise noted
Parameter
Value
35
30
4
50
150
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
I
C
=
10
μA, I
E
=0
I
C
=
1
mA, I
B
=0
I
E
=
10
μA, I
C
=0
V
CB
=35V, I
E
=0
V
EB
=
4
V, I
C
=0
V
CE
=12V, I
C
=2mA
I
C
=
10
mA, I
B
=
1
mA
I
C
=
10
mA, I
B
=
1
mA
V
CE
=10V, I
C
=
1
mA
V
CB
=10V, I
E
=
0
, f=
1M
HZ
V
CE
=
10
V, I
C
=
1
mA, f=30
M
HZ
V
CE
=
6
V, I
C
=
1
mA, f=
10.7M
HZ
MIN
35
30
4
40
100
27
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector- Base time constant
Power Gain
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Cc.rbb’
Gp
V
V
V
μA
μA
V
V
MHz
pF
ps
dB
0.1
0.1
240
0.4
1
400
3.2
50
33
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