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參數(shù)資料
| 型號： | 2SC2618 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 24K |
| 代理商： | 2SC2618 |
2SC2618
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
35
V
Collector to emitter voltage
35
V
Emitter to base voltage
4
V
Collector current
500
mA
Collector power dissipation
150
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
35
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
35
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
4
—
—
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
h
FE1
*
1
—
—
0.5
μ
A
V
CB
= 20 V, I
C
= 0
V
= 3 V, I
C
= 10 mA
(Pulse test)
DC current transfer ratio
60
—
320
h
FE2
10
—
—
V
= 3 V, I
C
= 500 mA
(Pulse test)
Collector to emitter saturation
voltage
V
CE(sat)
—
0.2
0.6
V
I
= 150 mA, I
B
= 15 mA
(Pulse test)
Base to emitter voltage
V
BE
—
0.64
—
V
V
= 3 V, I
C
= 10 mA
(Pulse test)
Note:
Grade
1. The 2SC2618 is grouped by h
FE1
as follows.
B
C
D
Mark
RB
RC
RD
h
FE1
60 to 120
100 to 200
160 to 320
See characteristic curves of 2SC1213.
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PDF描述 |
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| 2SC2688 | NPN Silicon Transistor |
| 2SC2688K | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2618RCTL-E | 制造商:Renesas Electronics 功能描述:NPN Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN Transistor,35V,0.5A,MPAK 制造商:Renesas 功能描述:Trans GP BJT NPN 35V 0.5A 3-Pin MPAK T/R |
| 2SC2618RDTR-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
| 2SC2619 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-5930V .1A .15W ECB SURFACE MOUNT |
| 2SC2620Q | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC2621 | 制造商: 功能描述:Bipolar Junction Transistor, NPN Type, TO-126 |
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