參數(shù)資料
型號(hào): 2SC2570A-TE-A
元件分類(lèi): 小信號(hào)晶體管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92
封裝: SC-43B, 3 PIN
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 133K
代理商: 2SC2570A-TE-A
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC2570A
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Document No. PU10207EJ01V0DS (1st edition)
(Previous No. P10404EJ3V0DS00)
Date Published April 2003 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 1980, 2003
DESCRIPTION
The 2SC2570A is designed for use in Low Noise Amplifier of VHF and UHF satges.
FEATURES
Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @ VCE = 10 V, IC = 5 mA, f = 1 GHz
Wide dynamic range : NF = 1.9 dB TYP., Ga = 9 dB TYP. @ VCE = 10 V, IC = 15 mA, f = 1 GHz
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC2570A
500 pcs (Non reel)
18 mm wide radial taping
2SC2570A-T
2.5 kpcs/box (Box type)
Supplying paper tape with in a box
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 500 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
70
mA
Total Power Dissipation
Ptot
Note
600
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Free air
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