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參數(shù)資料
| 型號： | 2SC2570A-E-A |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | SC-43B, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 133K |
| 代理商： | 2SC2570A-E-A |
Data Sheet PU10207EJ01V0DS
2
2SC2570A
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 10 V, IE = 0 mA
–
1.0
A
Emitter Cut-off Current
IEBO
VEB = 1.0 V, IC = 0 mA
–
1.0
A
DC Current Gain
hFE
Note 1
VCE = 10 V, IC = 20 mA
40
–
200
–
RF Characteristics
Gain Bandwidth Product
fT
VCE = 10 V, IC = 20 mA
–
5.0
–
GHz
Insertion Power Gain
S21e2 VCE = 10 V, IC = 20 mA, f = 1 GHz
8
10
–
dB
Noise Figure
NF
VCE = 10 V, IC = 5 mA, f = 1 GHz
–
1.5
3.0
dB
Output Capacitance
Cob
Note 2
VCB = 10 V, IE = 0 mA, f = 1 MHz
–
0.7
0.9
pF
Maximum Available Power Gain
MAG
VCE = 10 V, IC = 20 mA, f = 1 GHz
–
11.5
dB
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
E
Marking
E
hFE Value
40 to 200
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2570A-T | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC2577 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SC2578 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC2579 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SC2580 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
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