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參數(shù)資料
| 型號(hào)： | 2SC2551-R |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | 2-5F1B, SC-43, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 642K |
| 代理商： | 2SC2551-R |
2SC2551
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2551
Hight Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
High voltage: VCBO = 300 V, VCEO = 300 V
Low saturation voltage: VCE (sat) = 0.5 V (max)
Small collector output capacitance: Cob = 3 pF (typ.)
Complementary to 2SA1091.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
300
V
Collector-emitter voltage
VCEO
300
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
100
mA
Base current
IB
20
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 300 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
0.1
μA
Collector-base breakdown voltage
V (BR) CBO
IC = 0.1 mA, IE = 0
300
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 1 mA, IB = 0
300
V
hFE (1)
(Note)
VCE = 10 V, IC = 20 mA
30
150
DC current gain
hFE (2)
VCE = 10 V, IC = 1 mA
20
Collector-emitter saturation voltage
VCE (sat)
IC = 20 mA, IB = 2 mA
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 20 mA, IB = 2 mA
1.2
V
Transition frequency
fT
VCE = 10 V, IC = 20 mA
50
80
MHz
Collector output capacitance
Cob
VCB = 20 V, IE = 0, f = 1 MHz
3
4
pF
Note: hFE (1) classification R: 30~90, O: 50~150
Industrial Applications
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC2551-R(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC2552 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| 2SC2553 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SC2555 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2SC2556 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
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