參數(shù)資料
型號(hào): 2SC1946A
廠商: ADVANCED SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 0.380 INCH, FM-4
文件頁數(shù): 1/1頁
文件大小: 29K
代理商: 2SC1946A
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCES
IC = 25 mA
36
V
BVCEO
IC = 25 mA
16
V
BVEBO
IE = 5.0 mA
4.0
V
ICES
VCE = 15 V
5.0
mA
hFE
VCE = 5.0 V
IC = 1.0 A
40
75
150
---
Cob
VCB = 15 V
f = 1.0 MHz
75
100
pF
GPE
η
VCC = 12.5 V
Pout = 30 W
f = 175 MHz
10
60
11
70
DB
%
ψ
VCC = 15.5 V
PIN = 2.0 dB Overdrive
Load VSWR = 30:1 ALL PHASE ANGLES
No Degradation in Power Output
NPN SILICON RF POWER TRANSISTOR
2SC1946A
DESCRIPTION:
The
2SC1946A is Designed for
12.5 V 175 MHz Large-Signal Power
Amplifier Applications.
FEATURES INCLUDE:
High Common Emitter Power Gain
Output Power = 30 W
MAXIMUM RATINGS
IC
8.0 A
VCE
16 V
VCB
36 V
PDISS
100 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θ
JC
1.75 °C/W
PACKAGE STYLE .380" 4L FLG
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.89
inches / mm
H
.160 / 4.06
.180 / 4.57
DIM
.220 / 5.59
.230 / 5.84
.105 / 2.67
.085 / 2.16
I
J
.240 / 6.10
.255 / 6.48
.785 / 19.94
F
B
G
.125
.125 NOM.
FULL R
D
E
C
H
.112 x 45°
A
I
J
.004 / 0.10
.006 / 0.15
.280 / 7.11
.720 / 18.29
.730 / 18.54
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