參數(shù)資料
型號(hào): 2SC1756E
英文描述: TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 700MA I(C) | TO-220
中文描述: 晶體管|晶體管|叩| 300V五(巴西)總裁| 700mA的一(c)|至220
文件頁(yè)數(shù): 2/7頁(yè)
文件大小: 34K
代理商: 2SC1756E
2SC1775, 2SC1775A
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SC1775
2SC1775A
Unit
Collector to base voltage
V
CBO
90
120
V
Collector to emitter voltage
V
CEO
90
120
V
Emitter to base voltage
V
EBO
55V
Collector current
I
C
50
mA
Collector power dissipation
P
C
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
–50 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SC1775
2SC1775A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to emitter
breakdown voltage
V
(BR)CEO
90
120
V
I
C = 1 mA, RBE = ∞
Collector cutoff current
I
CBO
0.5
AV
CB = 75 V, IE = 0
——
0.5
AV
CB = 100 V, IE = 0
DC current transfer ratio h
FE1*
1
400
1200 400
1200
V
CE = 12 V, IC = 2 mA
h
FE2
160
160
V
CE = 12 V,
I
C = 0.1 mA
Base to emitter voltage
V
BE
0.75
0.75
V
CE = 12 V, IC = 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
0.5
0.5
V
I
C = 10 mA, IB = 1 mA
Gain bandwidth product f
T
200
200
MHz
V
CE = 12 V, IC = 2 mA
Collector output
capacitance
Cob
1.6
1.6
pF
V
CB = 25 V, IE = 0,
f = 1 MHz
Noise figure
NF
5.0
5.0
dB
V
CE = 6 V,
I
C = 50 A,
R
g = 50 k
f = 10
Hz
1.5
1.5
dB
f = 1
kHz
Note:
1. The 2SC1775/A is grouped by h
FE1 as follows.
EF
400 to 800
600 to 1200
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