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參數(shù)資料
| 型號： | 2SC1627-Y |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | 2-5F1B, SC-43, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 367K |
| 代理商： | 2SC1627-Y |
2SC1627
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1627
Driver Stage Amplifier Applications
Voltage Amplifier Applications
Complementary to 2SA817
Driver stage application of 20 to 25 watts amplifiers.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
300
mA
Base current
IB
60
mA
Collector power dissipation
PC
600
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
Collector-emitter saturation voltage
V (BR) CEO
IC = 5 mA, IB = 0
80
V
hFE (1)
(Note)
VCE = 2 V, IC = 50 mA
70
240
DC current gain
hFE (2)
VCE = 2 V, IC = 200 mA
40
Collector-emitter saturation voltage
VCE (sat)
IC = 200 mA, IB = 10 mA
0.5
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 5 mA
0.55
0.8
V
Transition frequency
fT
VCE = 10 V, IC = 10 mA
100
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
10
pF
Note: hFE (1) classification O: 70~140, Y: 120~240
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC1627A-O | 400 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC1654-T1B | 50 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC1654-T2B | 50 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC1653-T2BN2 | 50 mA, 130 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC1653-T1B | 50 mA, 130 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC1627-Y(F) | 制造商:Toshiba 功能描述:NPN 80V 0.3A 120 to 240 TO92 Bulk |
| 2SC1628 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS) |
| 2SC1628-0 | 制造商:Panasonic Industrial Company 功能描述:DISCD TRANSISTOR |
| 2SC1628-O | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS) |
| 2SC1628Y | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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