參數(shù)資料
型號: 2SC1590
廠商: Electronic Theatre Controls, Inc.
英文描述: Silicon NPN Transistor RF Power Output
中文描述: 硅NPN晶體管射頻輸出功率
文件頁數(shù): 1/2頁
文件大?。?/td> 9K
代理商: 2SC1590
2SC1590
Silicon NPN Transistor
RF Power Output
The 2SC1590 is a silicon NPN epitaxial planer type
transistor designed for 136
-
174MHz RF power amplifiers
on VHF band mobile radio applications.
WIN
Transceiver
B E C
Features:
High Power Gain:
G
pe
>/= 10dB (V
CC
= 13.5V, P
O
= 6W, f = 175MHz)
Ability to Withstand more than 20:1 VSWR Load when Operated at:
V
CC
= 15.2V, P
O
= 6W, f = 175MHz
Application:
4 to 5 Watt Output Power Amplifier Applications in VHF Band
Absolute Maximum Ratings:
(T
C
= +25°C unless otherwise specified)
Collector
-
Emitter Voltage (R
BE
= Infinity), V
CEO
Collector
-
Base Voltage, V
CBO
Emitter
-
Base Voltage, V
EBO
Collector
Current, I
C
Collector Power Dissipation (T
A
= +25°C), P
D
Collector Power Dissipation (T
C
= +50°C), P
D
Operating Junction Temperature, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction
-
to
-
Case, R
thJC
Thermal Resistance, Junction
-
to
-
Ambient, R
thJA
Electrical Characteristics:
(T
C
= +25°C unless otherwise specified)
17V
35V
4V
12A
1.5W
12.5W
+150°C
-
55° to +150°C
1
0°C/W
83°C/W
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
35
-
17
-
Collector
-
Base Breakdown Voltage
V
(BR)CBO
I
C
= 10mA, I
E
= 0
Coll
ector
-
Emitter Breakdown
Voltage
Emitter
-
Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Forward Current Gain
Power Output
C
ollector Efficiency
-
-
V
V
V
(BR)CEO
I
C
= 50mA, R
BE
= Infinity
V
(BR)EBO
I
E
= 5mA, I
C
= 0
I
CBO
V
CB
= 25V I
E
= 0
I
EBO
V
EB
= 3V, I
C
= 0
h
FE
V
CE
= 10V, I
C
= 100mA, Note 1
P
O
V
CC
= 13.5V, P
in
= 600mW, f =
175MHz
4
-
-
10
6
60
-
-
-
-
V
μA
μA
500
500
180
-
-
50
7
70
W
%
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