參數(shù)資料
型號: 2SC1318
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)
中文描述: 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: ROHS COMPLIANT, TO-92-B1, 3 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 67K
代理商: 2SC1318
Transistors
2SC1317, 2SC1318
Silicon NPN epitaxial planer type
1
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CBO
V
CB
=
20 V, I
E
=
0
I
C
=
10
μ
A, I
E
=
0
0.1
μ
A
Collector to
base voltage
2SC1317
30
V
2SC1318
60
Collector to
emitter voltage
2SC1317
V
CEO
I
C
=
10 mA, I
B
=
0
25
V
2SC1318
50
Emitter to base voltage
V
EBO
h
FE1
*2
h
FE2
V
CE(sat)
I
E
=
10
μ
A, I
C
=
0
V
CE
=
10 V, I
C
=
150 mA
V
CE
=
10 V, I
C
=
500 mA
I
C
=
300 mA, I
B
=
30 mA
I
C
=
300 mA, I
B
=
30 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0
, f
=
1 MHz
7
V
Forward current transfer ratio
*1
85
340
40
Collector to emitter saturation voltage
*1
0.35
0.6
V
Base to emitter saturation voltage
*1
V
BE(sat)
f
T
C
ob
1.1
1.5
V
Transition frequency
200
MHz
Collector output capacitance
6
15
pF
For low-frequency power amplification and driver amplification
Complementary to 2SA719 and 2SA720
I
Features
Low collector to emitter saturation voltage V
CE(sat)
Complementary pair with 2SA719 and 2SA720
I
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector to
base voltage
2SC1317
V
CBO
30
V
2SC1318
60
Collector to
emitter voltage
2SC1317
V
CEO
25
V
2SC1318
50
Emitter to base voltage
V
EBO
I
CP
I
C
7
V
Peak collector current
1
A
Collector current
500
mA
Collector power dissipation
P
C
T
j
T
stg
625
mW
Junction temperature
150
°
C
°
C
Storage temperature
55 to
+
150
I
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note)*1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
h
FE1
85 to 170
120 to 240
170 to 340
1: Emitter
2: Collector
3: Base
TO-92 Package
Unit: mm
5.0
±
0.2
0.7
±
0.1
(1.27)
1
3
2
2.54
±
0.15
(1.27)
2
±
0
0.45
+0.15
0.45
+0.15
0
±
0
5
±
0
1
±
0
4.0
±
0.2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC13180RA 功能描述:TRANS NPN 50VCEO 500MA TO-92 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SC1318A 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SC1318AQ 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 500MA I(C) | TO-226AA
2SC1318AR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 500MA I(C) | TO-226AA
2SC1318ARA 功能描述:TRANS NPN 70VCEO 500MA TO-92 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR