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參數(shù)資料
| 型號： | 2SC1317R |
| 英文描述： | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 25V的五（巴西）總裁| 500mA的一（c）|至92 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 2SC1317R |
2SC1344, 2SC1345
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SC1344
2SC1345
Unit
Collector to base voltage
V
CBO
30
55
V
Collector to emitter voltage
V
CEO
30
50
V
Emitter to base voltage
V
EBO
55V
Collector current
I
C
100
mA
Collector power dissipation
P
C
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SC1344
2SC1345
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
30
—
55
—
V
I
C = –10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
30
—
50
—
V
I
C = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
5
—
—5
——
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
—
0.5
—
0.5
AV
CB =18 V, IE = 0
Emitter cutoff current
I
EBO
—
0.5
—
0.5
AV
EB = 2 V, IC = 0
DC current transfer ratio h
FE*
1
250
—
1200
250
—
1200
V
CE = 12 V, IC = 2 mA
Base to emitter voltage
V
BE
—
0.75
—
0.75
V
CE = 12 V, IC = 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
—
0.5
—
0.5
V
I
C = 10 mA, IB = 1 mA
Gain bandwidth product f
T
—
230
—
230
—
MHz
V
CE = 12 V, IC = 2 mA
Collector output
capacitance
Cob
—
3.5
—
3.5
pF
V
CB = 10 V, IE = 0,
f = 1 MHz
Noise figure
NF
—
8
—
8
dB
V
CE = 6 V, IC = 0.1 mA,
f = 10 Hz, R
g = 10 k
——1
—
1
dB
V
CE = 6 V, IC = 0.1 mA,
f = 1 kHz, R
g = 10 k
Note:
1. The 2SC1344 and 2SC1345 are grouped by h
FE as follows.
DE
F
250 to 500
400 to 800
600 to 1200
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC1317S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-92 |
| 2SC1318 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Plastic Encapsulated Transistor |
| 2SC13180RA | 功能描述:TRANS NPN 50VCEO 500MA TO-92 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC1318A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC1318AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 500MA I(C) | TO-226AA |
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