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參數資料
| 型號： | 2SC1214 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial Low frequency amplifier |
| 中文描述： | npn型硅外延低頻放大器 |
| 文件頁數： | 4/7頁 |
| 文件大小： | 37K |
| 代理商： | 2SC1214 |
2SC1214
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
50
V
Collector to emitter voltage
50
V
Emitter to base voltage
4
V
Collector current
500
mA
Collector power dissipation
600
mW
Junction temperature
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
50
—
—
V
I
C
= 10 μA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
50
—
—
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
4
—
—
V
I
E
= 10 μA, I
C
= 0
Collector cutoff current
I
CBO
h
FE
*
h
FE
—
—
0.5
μA
V
CB
= 20 V, I
E
= 0
V
CE
= 3 V, I
C
= 10 mA
V
= 3 V, I
C
= 500 mA
(pulse test)
DC current transfer ratio
60
—
320
10
—
—
Collector to emitter saturation
voltage
V
CE(sat)
—
0.2
0.6
V
I
= 150 mA, I
B
= 15 mA
(Pulse test)
Base to emitter voltage
Note:
1. The 2SC1214 is grouped by h
FE
as follows.
B
C
V
BE
—
0.64
—
V
V
CE
= 3 V, I
C
= 10 mA
D
60 to 120
100 to 200
160 to 320
See characteristic curves of 2SC1213.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC1214C(TZ-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC1214CTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC1214DTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC1215 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC1216 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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