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參數(shù)資料
| 型號： | 2SC1213AKCTZ-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | LEAD FREE, SC-43A, TO-92(1), 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 78K |
| 代理商： | 2SC1213AKCTZ-E |
2SC1213A(K)
Rev.2.00 Aug 10, 2005 page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
50
—
V
IC = 10
A, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO
50
—
V
IC = 1.0 mA, RBE =
∞
Emitter to base breakdown voltage
V(BR)EBO
4
—
V
IE = 10
A, IC = 0
Collector cutoff current
ICBO
—
0.5
A
VCB = 20 V, IE = 0
DC current transfer ratio
hFE*
1
100
—
320
VCE = 3 V, IC = 10 mA
hFE
10
—
VCE = 3 V, IC = 500 mA*
2
Base to emitter voltage
VBE
0.64
—
V
VCE = 3 V, IC = 10 mA
Collector to emitter saturation voltage
VCE(sat)
—
0.12
0.6
V
IC = 150 mA, IB = 15 mA*
2
Base to emitter satruation voltage
VBE(sat)
—
0.83
1.2
V
IC = 150 mA, IB = 15 mA*
2
Collector output capacitance
Cob
—
7.0
—
pF
VCB = 10 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT
—
120
—
MHz
VCE = 3 V, IC = 10 mA
Turn on time
ton
—
0.25
—
S
VCC = 10.3 V
IC = 10 IB1 = –10 IB2 = 10 mA
Turn off time
toff
—
0.85
—
S
Storage time
tstg
—
0.4
—
S
VCC = 5 V
IC = IB1 = –IB2 = 20 mA
Notes: 1. The 2SC1213A(K) is grouped by hFE as follows.
2. Pulse test
C
D
100 to 200
160 to 320
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC1213B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 500MA I(C) | TO-92 |
| 2SC1213C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 500MA I(C) | TO-92 |
| 2SC1213CTZ(E) | 制造商:Renesas Electronics 功能描述:NPN Cut Tape |
| 2SC1213CTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC1213D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 500MA I(C) | TO-92 |
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