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參數(shù)資料
| 型號(hào)： | 2SB955(K) |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 10 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 7/7頁(yè) |
| 文件大?。?/td> | 170K |
| 代理商： | 2SB955(K) |
2SB955(K)
3
Maximum Collector Dissipation
Curve
50
40
30
20
10
0
50
100
Case temperature TC (°C)
150
Collector
power
dissipation
P
C
(W)
Area of Safe Operation
–30
–10
–3
–1.0
–0.3
–0.1
–0.03
–3
–10
–30
Collector to emitter voltage VCE (V)
–100
–300
iC(peak)
IC(max)
PW
=
1
ms
1
shot
PW
=
10
ms
1
shot
DC
Operation(T
C =
25
°C)
Ta = 25
°C
Collector
current
I
C
(A)
TC = 25°C
IB = 0
P
C
=
50
W
Typical Output Characteristics
–10
–8
–6
–4
–2
0–2
–4
Collector to emitter voltage VCE (V)
–6
–8
–10
0.4 mA
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
Collector
current
I
C
(A)
VCE = –3 V
Pulse
DC Current Transfer Ratio vs.
Collector Current
30000
10000
3000
1000
300
100
30
–0.3
–1.0
DC
current
transfer
ratio
h
FE
–3
–10
–30
Collector current IC (A)
Ta
= 75
°C
25
–25
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB962-Z-E1 | Si, POWER TRANSISTOR |
| 2SB962-ZQ-E1 | Si, POWER TRANSISTOR |
| 2SB962-ZR | 3 A, 30 V, PNP, Si, POWER TRANSISTOR |
| 2SB962-ZE-E2 | Si, POWER TRANSISTOR |
| 2SB962-ZR-E1 | Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB955-K(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SB956 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANSISTOR C-62 -20V -1A 1W ECB SMD |
| 2SB956R | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SC-62 |
| 2SB956RS-TX | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB956S | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SC-62 |
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