參數(shù)資料
型號(hào)： 2SB955(K)
元件分類： 功率晶體管
英文描述： 10 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁(yè)數(shù)： 4/7頁(yè)
文件大?。?/td> 44K
代理商： 2SB955(K)
2SB955(K)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
–120
V
Collector to emitter voltage
V
CEO
–120
V
Emitter to base voltage
V
EBO
–7
V
Collector current
I
C
–10
A
Collector peak current
I
C(peak)
–15
A
C to E diode forward current
I
D*
1
10
A
Collector power dissipation
P
C*
2
50
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. Value at T
C = 25°C
2. PW
≤ 1 ms 1 shot
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
–120
—
V
I
C = –25 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–7
—
V
I
E = –200 mA, IC = 0
Collector cutoff current
I
CBO
—
–100
AV
CB = –120 V, IE = 0
I
CEO
—
–10
AV
CE = –100 V, RBE = ∞
DC current transfer ratio
h
FE
1000
—
20000
V
CE = –3 V, IC = –5 A*
1
Collector to emitter saturation
V
CE(sat)1
—
–1.5
V
I
C = –5 A, IB = –10 mA*
1
voltage
V
CE(sat)2
—
–3.0
V
I
C = –10 A, IB = –0.1 A*
1
Base to emitter saturation
V
BE(sat)1
—
–2.0
V
I
C = –5 A, IB = –10 mA*
1
voltage
V
BE(sat)2
—
–3.5
V
I
C = –10 A, IB = –0.1 A*
1
C to E diode forward voltage
V
D
—
3.0
V
I
D = 10 A*
1
Turn on time
t
on
—
0.8
—
sV
CC = –30 V
Turn off time
t
off
—
4.0
—
sI
C = –5 A, IB1 = –IB2 = –10 mA
Note:
1. Pulse test
相關(guān)PDF資料
PDF描述
2SB955(K) 10 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB962-Z-E1 Si, POWER TRANSISTOR
2SB962-ZQ-E1 Si, POWER TRANSISTOR
2SB962-ZR 3 A, 30 V, PNP, Si, POWER TRANSISTOR
2SB962-ZE-E2 Si, POWER TRANSISTOR
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