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    參數(shù)資料
    型號: 2SB931P
    廠商: PANASONIC CORP
    元件分類: 功率晶體管
    英文描述: 3 A, 80 V, PNP, Si, POWER TRANSISTOR
    封裝: ROHS COMPLIANT, N-G1, 3 PIN
    文件頁數(shù): 1/4頁
    文件大?。?/td> 252K
    代理商: 2SB931P
    Power Transistors
    1
    Publication date: April 2003
    SJD00013BED
    2SB0931 (2SB931)
    Silicon PNP epitaxial planar type
    For Power switching
    Complementary to 2SD1254
    ■ Features
    Low collector-emitter saturation voltage V
    CE(sat)
    Satisfactory linearity of forward current transfer ratio h
    FE
    Large collector current I
    C
    N type package enabling direct soldering of the radiating fin to the
    printed circuit board, etc. of small electronic equipment.
    ■ Absolute Maximum Ratings T
    C
    = 25°C
    Parameter
    Symbol
    Rating
    Unit
    Collector-base voltage (Emitter open)
    VCBO
    130
    V
    Collector-emitter voltage (Base open)
    VCEO
    80
    V
    Emitter-base voltage (Collector open)
    VEBO
    7V
    Collector current
    IC
    3A
    Peak collector current
    ICP
    6A
    Collector power dissipation
    PC
    30
    W
    Ta = 25°C
    1.3
    Junction temperature
    Tj
    150
    °C
    Storage temperature
    Tstg
    55 to +150
    °C
    Parameter
    Symbol
    Conditions
    Min
    Typ
    Max
    Unit
    Collector-emitter voltage (Base open)
    VCEO
    IC
    = 10 mA, I
    B
    = 0
    80
    V
    Collector-base cutoff current (Emitter open)
    ICBO
    VCB = 100 V, IE = 0
    10
    A
    Emitter-base cutoff current (Collector open)
    IEBO
    VEB = 5 V, IC = 0
    50
    A
    Forward current transfer ratio
    hFE1
    VCE
    = 2 V, I
    C
    = 0.1 A
    45
    hFE2 *
    VCE = 2 V, IC = 0.5 A
    90
    260
    Base-emitter voltage
    VBE(sat)
    IC = 2 A, IB = 0.1 A
    1.5
    V
    Collector-emitter saturation voltage
    VCE(sat)
    IC
    = 2 A, I
    B
    = 0.1 A
    0.5
    V
    Transition frequency
    fT
    VCE = 10 V, IC = 0.5 A, f = 10 MHz
    30
    MHz
    Turn-on time
    ton
    IC = 0.5 A,
    0.3
    s
    Storage time
    tstg
    IB1
    = 50 mA, I
    B2
    = 50 mA
    1.1
    s
    Fall time
    tf
    VCC = 50 V
    0.3
    s
    ■ Electrical Characteristics T
    C
    = 25°C ± 3°C
    Unit: mm
    Rank
    Q
    P
    hFE2
    90 to 180
    130 to 260
    Note) The part number in the parenthesis shows conventional part number.
    8.5±0.2
    3.4±0.3
    1.0±0.1
    0 to 0.4
    6.0±0.2
    0.8±0.1 R = 0.5
    R = 0.5
    1.0±0.1
    0.4±0.1
    (8.5)
    (6.5)
    (6.0)
    1.3
    (1.5)
    (7.6)
    2.54±0.3
    1.4±0.1
    5.08±0.5
    123
    1.5
    ±
    0.1
    2.0
    ±
    0.5
    10.0
    ±
    0.3
    1.5
    +0 –0.4
    3.0
    +0.4 –0.2
    4.4
    ±
    0.5
    4.4
    ±0
    .5
    14.4
    ±
    0.5
    Note) Self-supported type package is also prepared.
    Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
    2. *: Rank classification
    1: Base
    2: Collector
    3: Emitter
    N-G1 Package
    This product complies with the RoHS Directive (EU 2002/95/EC).
    Ma
    int
    en
    an
    ce
    /
    Dis
    co
    nti
    nu
    ed
    Maintenance/Discontinued
    includes
    following
    four
    Product
    lifecy
    cle
    stage.
    planed
    maintenance
    type
    maintenance
    type
    planed
    discontinued
    typed
    discontinued
    type
    Please
    visit
    following
    URL
    about
    latest
    information.
    http://panasonic.net/sc/en
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