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參數(shù)資料
| 型號： | 2SB931P |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, N-G1, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 252K |
| 代理商： | 2SB931P |
Power Transistors
1
Publication date: April 2003
SJD00013BED
2SB0931 (2SB931)
Silicon PNP epitaxial planar type
For Power switching
Complementary to 2SD1254
■ Features
Low collector-emitter saturation voltage V
CE(sat)
Satisfactory linearity of forward current transfer ratio h
FE
Large collector current I
C
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
■ Absolute Maximum Ratings T
C
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
130
V
Collector-emitter voltage (Base open)
VCEO
80
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
3A
Peak collector current
ICP
6A
Collector power dissipation
PC
30
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC
= 10 mA, I
B
= 0
80
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 100 V, IE = 0
10
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 0
50
A
Forward current transfer ratio
hFE1
VCE
= 2 V, I
C
= 0.1 A
45
hFE2 *
VCE = 2 V, IC = 0.5 A
90
260
Base-emitter voltage
VBE(sat)
IC = 2 A, IB = 0.1 A
1.5
V
Collector-emitter saturation voltage
VCE(sat)
IC
= 2 A, I
B
= 0.1 A
0.5
V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 10 MHz
30
MHz
Turn-on time
ton
IC = 0.5 A,
0.3
s
Storage time
tstg
IB1
= 50 mA, I
B2
= 50 mA
1.1
s
Fall time
tf
VCC = 50 V
0.3
s
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Rank
Q
P
hFE2
90 to 180
130 to 260
Note) The part number in the parenthesis shows conventional part number.
8.5±0.2
3.4±0.3
1.0±0.1
0 to 0.4
6.0±0.2
0.8±0.1 R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
(8.5)
(6.5)
(6.0)
1.3
(1.5)
(7.6)
2.54±0.3
1.4±0.1
5.08±0.5
123
1.5
±
0.1
2.0
±
0.5
10.0
±
0.3
1.5
+0 –0.4
3.0
+0.4 –0.2
4.4
±
0.5
4.4
±0
.5
14.4
±
0.5
Note) Self-supported type package is also prepared.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
1: Base
2: Collector
3: Emitter
N-G1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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| 2SB932Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-221VAR |
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