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參數(shù)資料
| 型號： | 2SB906Y(2-7B1A) |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, 2-7B1A, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 160K |
| 代理商： | 2SB906Y(2-7B1A) |
2SB906
2006-11-21
3
Collector-emitter voltage VCE (V)
IC – VCE
Colle
ct
or
curr
ent
I C
(A
)
Common emitter
Tc = 25°C
0
4
1
2
1
2
3
4
3
5
IB = 10 mA
0
20
30
40
50
60
70
80
Collector current IC (A)
hFE – IC
DC
curre
nt
gain
h
FE
30
100
300
500
1000
0.03
0.1
0.3
1
Tc = 100°C
25
50
3
Common emitter
VCE = 5 V
25
Collector current IC (A)
VCE (sat) – IC
Colle
ctor-emi
tter
sa
tura
tion
vol
tage
V
CE
(sat)
(V)
0.1
0.3
1
3
0.03
0.05
0.3
0.5
0.1
1
25
Tc = 100°C
0.02
25
Common emitter
IC/IB = 10
Base-emitter voltage VBE (V)
IC – VBE
Colle
ct
or
curr
ent
I C
(A
)
0
3.0
2.0
1.5
0.2
0.6
0.8
1.2
2.5
25
Tc = 100°C
25
1.0
0.4
0.5
1.0
Common emitter
VCE = 5 V
Ambient temperature Ta (°C)
PC – Ta
Colle
ctor
p
ower
d
issip
atio
n
P
C
(W)
Collector-emitter voltage VCE (V)
Safe Operating Area
Colle
ct
or
curr
ent
I C
(A
)
24
0
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 × 50 × 0.8 mm
(3) No heat sink
25
50
75
100
125
150
175
4
8
12
16
20
(1)
(2)
(3)
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
10
IC max (continuous)
IC max (pulsed)*
VCEO max
DC operation
Tc = 25°C
100
10
1
3
0.1
0.3
0.5
1
3
5
30
1 ms*
10 ms*
100 ms*
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