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參數(shù)資料
| 型號(hào)： | 2SB874B |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 2 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 32K |
| 代理商： | 2SB874B |
2SB874
2
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–100
—
V
I
C = –1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–60
—
V
I
C = –10 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
—
V
I
E = –1 mA, IC = 0
Collector cutoff current
I
CBO
——–1.0
AV
CB = –80 V, IE = 0
Emitter cutoff current
I
EBO
——–1.0
AV
EB = –5 V, IC = 0
DC current transfer ratio
h
FE1*
1
60
—
200
V
CE = –5 V, IC = –0.5 A*
2
h
FE2
40
—
V
CE = –5 V, IC = –2 A*
2
Base to emitter voltage
V
BE
——–1.4
V
CE = –5 V, IC = –2 A*
2
Collector to emitter saturation
voltage
V
CE(sat)
—
–0.6
–1.0
V
I
C = –1.5 A IB = –0.15 A*
2
Gain bandwidth product
f
T
—
250
—
MHz
V
CE = –5 V, IC = –0.5 A*
2
Collector output capacitance
Cob
—
50
—
pF
V
CB = –10 V, IE = 0, f = 1 MHz
Notes: 1. The 2SB874 is grouped by h
FE as follows.
2. Pulse test
BC
60 to 120
100 to 200
0
50
100
150
Case Temperature TC (°C)
Collector
power
dissipation
Pc
(W)
Maximum Collector Dissipation Curve
10
20
30
–0.01
–0.03
–0.1
–0.3
–1.0
–10
–3
Collector to emitter Voltage VCE (V)
Collector
Current
I
C
(A)
–2
–5
–10
–20
–50 –100 –200
Area of Safe Operation
iC (peak) (–10 V, –3 A)
(–20 V, –1 A)
(–13.3 V, –3 A)
(–30 V, –1.33 A)
(–60 V, –0.25 A)
(–60 V, –0.15 A)
(–60 V, –0.1 A)
IC (max) (–10 V, –2 A)
PW
=
1
ms
DC
Operation
(T
C =
25
°C)
Ta = 25
°C
1 Shot pulse
10
ms
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB874C | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 2A I(C) | TO-220AB |
| 2SB874VC | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB880 | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS DARL PNP 60V 4A TO-220AA |
| 2SB881 | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:Driver Applications |
| 2SB882 | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS DARL PNP 60V 10A TO-220AA |
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