參數(shù)資料
型號(hào): 2SB860
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Triple Diffused
中文描述: 三重?cái)U(kuò)散硅進(jìn)步黨
文件頁數(shù): 3/5頁
文件大小: 31K
代理商: 2SB860
2SB860
3
Typical Output Characteristics
T
C
= 25
°
C
–1.0
–0.8
–0.6
–0.4
–0.2
0
–2
–4
Collector to emitter voltage V
CE
(V)
C
C
–6
–8
–10
I
B
= –2 mA
–4
–6
–8
–10
DC Current Transfer Ratio vs.
Collector Current
V
CE
= –5 V
T
C
= 75
°
C
25
–25
1,000
500
200
D
F
100
50
20
10
–0.01
–0.1
–1.0
–10
–0.03
–0.3
Collector current I
C
(A)
–3
Collector to Emitter Saturation
Voltage vs. Collector Current
I
C
= 10 I
B
T
C
= 75
°
C
25
–25
–10
–3
–1.0
–0.3
–0.1
–0.03
–0.01
–0.01
–0.1
–1.0
–10
–0.03
–0.3
Collector current I
C
(A)
C
V
C
–3
Base to Emitter Saturation Voltage
vs. Collector Current
I
C
= 10 I
B
–1.5
–1.0
–0.5
0
–0.01
–0.1
–1.0
–10
–0.03
–0.3
Collector current I
C
(A)
B
V
B
–3
T
C
= –25
°
C
25
75
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