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參數(shù)資料
| 型號： | 2SB858D |
| 英文描述： | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 60V的五（巴西）總裁| 4A條一（c）| TO - 220AB現(xiàn)有 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 29K |
| 代理商： | 2SB858D |
2SB857, 2SB858
3
Collector to emitter Voltage VCE (V)
Collector
Current
I
C
(A)
–2
–4
–6
–8
–10
Typical Output Characteristics
0
–1
–2
–3
–4
–5
TC = 25°C
P
c
= 40
W
IB = 0
–10 mA
–20
–30
–40
–50
–60
–70
–0.01
–0.02
–0.05
–0.1
–0.2
–0.5
–1.0
–2
–5
Base to emitter voltage VBE (V)
Collector
current
I
C
(A)
0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4
Typical Transfer Characteristics
VCE = –4 V
T
C
=
75
°C
25
–25
5
10
20
50
100
200
500
1,000
Collector current IC (A)
DC
current
transfer
ratio
h
FE
–0.01–0.02 –0.05–0.1 –0.2
–0.5 –1.0 –2
–4
DC Current Transfer Ratio vs.
Collector Current
VCE = –4 V
TC = 75°C
25
–25
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
Collector current IC (A)
Collector
to
emitter
saturation
voltage
V
CE
(sat)
(V)
–0.01–0.02 –0.05 –0.1 –0.2
–0.5 –1.0 –2
–5
Collector to Emitter Saturation
Voltage vs. Collector Current
TC = 75°C
25
–25
IC = 10 IB
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB859 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB859B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB859C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB860 | 制造商:Renesas Electronics 功能描述:PNP 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SB861 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR 制造商:Hitachi 功能描述:Bipolar Junction Transistor, PNP Type, TO-220AB |
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