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參數(shù)資料
| 型號(hào)： | 2SB858 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 29K |
| 代理商： | 2SB858 |
2SB857, 2SB858
Silicon PNP Triple Diffused
ADE-208-859 (Z)
1st. Edition
Sep. 2000
Application
Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
2SB857
2SB858
Unit
Collector to base voltage
V
CBO
–70
V
Collector to emitter voltage
V
CEO
–50
–60
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–4
A
Collector peak current
I
C(peak)
–8
A
Collector power dissipation
P
C*
1
40
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–45 to +150
°C
Note:
1. Value at T
C = 25°C
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| 2SC829 | Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
| 2SC1213A(K)C | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC1213 | |
| 2SC1213A | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB858B | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB858C | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB858C-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB858D | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB859 | 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
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