參數(shù)資料
型號: 2SB857D
元件分類: 功率晶體管
英文描述: 4 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 5/6頁
文件大?。?/td> 41K
代理商: 2SB857D
2SB857, 2SB858
3
Collector to emitter Voltage VCE (V)
Collector
Current
I
C
(A)
–2
–4
–6
–8
–10
Typical Output Characteristics
0
–1
–2
–3
–4
–5
TC = 25°C
P
c
= 40
W
IB = 0
–10 mA
–20
–30
–40
–50
–60
–70
–0.01
–0.02
–0.05
–0.1
–0.2
–0.5
–1.0
–2
–5
Base to emitter voltage VBE (V)
Collector
current
I
C
(A)
0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4
Typical Transfer Characteristics
VCE = –4 V
T
C
=
75
°C
25
–25
5
10
20
50
100
200
500
1,000
Collector current IC (A)
DC
current
transfer
ratio
h
FE
–0.01–0.02 –0.05–0.1 –0.2
–0.5 –1.0 –2
–4
DC Current Transfer Ratio vs.
Collector Current
VCE = –4 V
TC = 75°C
25
–25
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
Collector current IC (A)
Collector
to
emitter
saturation
voltage
V
CE
(sat)
(V)
–0.01–0.02 –0.05 –0.1 –0.2
–0.5 –1.0 –2
–5
Collector to Emitter Saturation
Voltage vs. Collector Current
TC = 75°C
25
–25
IC = 10 IB
相關(guān)PDF資料
PDF描述
2SB858C 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB858D 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB858C 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB858 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
2SB887 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218
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