參數(shù)資料
型號: 2SB831BC
元件分類: 小信號晶體管
英文描述: 700 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: MPAK-3
文件頁數(shù): 2/5頁
文件大小: 24K
代理商: 2SB831BC
2SB831
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–25
V
Collector to emitter voltage
V
CEO
–20
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–0.7
A
Collector peak current
i
C(peak)
–1
A
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–25
V
I
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–20
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
——V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
–1.0
AV
CB = –20 V, IE = 0
DC current transfer ratio
h
FE*
1
85
240
V
CE = –1 V, IC = –0.15 A*
2
Collector to emitter saturation
voltage
V
CE(sat)
–0.5
V
I
C = –0.5 A, IB = –0.05 A*
2
Base to emitter voltage
V
BE
–1.0
V
CE = –1 V, IC = –0.15 A*
2
Notes: 1. The 2SB831 is grouped by h
FE as follows.
2. Pulse test
Grade
B
C
Mark
BB
BC
h
FE
85 to 170
120 to 240
See characteristic curves of 2SB561.
相關PDF資料
PDF描述
2SB831BB 700 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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