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參數(shù)資料
2SB824
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
4 of 5
www.unisonic.com.tw
QW-R208-042.B
TYPICAL CHARACTERISTICS
Collector
Current,
-I
C
(A)
Collector
Curr
ent,
-I
C
(A)
25
-2
0
℃
-5
00
m
A
T
a=
80
DC Current Gain vs. Collector Current
Collector Current, -IC (A)
0.01
0.1
DC
C
urren
tGain
,h
FE
10
7
1000
5
3
2
100
7
5
3
2
23
5
2
3
5 1.0
10
23
5
2
VCE=-2V
Ta=80℃
25℃
-20℃
Collector-Emitter Saturation Voltage vs.
Collector Current
Collector Current, -IC (A)
0.1
0.01
10
5
2
0.1
5
3
2
2 35
23
5 1.0
10
2 35
2
IC/IB=10
Ta
=8
0
25℃
-20℃
5
3
2
1.0
3
Collector-Emitter
Sa
turation
Volt
age,
-V
CE
(SAT
)(V)
Collector-Emitter Saturation Voltage vs.
Collector Current
Collector Current, -IC (A)
0.1
0.01
10
5
2
0.1
5
3
2
23
5
2
3
5
1.0
10
23
5
2
IC/IB=20
Ta
=8
0
25℃
-20℃
5
3
2
1.0
3
Collector-Emitter
Sa
turation
Voltage,
-V
C
E
(SAT)
(V)
Base-Emitter Saturation Voltage vs.
Collector Current
Collector Current, -IC (A)
0.1
10
5
2
1.0
5
3
2
23
5
2
3
5
1.0
10
23
5
2
IC/IB=10
3
Base-Emitter
Saturation
Voltage,
-V
BE(
SAT)
(V)
7
IC/IB=20
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PDF描述 |
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| 2SB826Q | 12 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SD1062R | 12 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SB828R | 12 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-218 |
| 2SB828R | 12 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-218 |
| 2SB828S | 12 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-218 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB824G-X-AB3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP PLANAR SILICON TRANSISTOR |
| 2SB824G-X-T60-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP PLANAR SILICON TRANSISTOR |
| 2SB824L-X-AB3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP PLANAR SILICON TRANSISTOR |
| 2SB824L-X-T60-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP PLANAR SILICON TRANSISTOR |
| 2SB824L-X-TM3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP PLANAR SILICON TRANSISTOR |
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