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參數(shù)資料
| 型號： | 2SB824G-Q-T60-K |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 封裝： | HALOGEN FREE PACKAGE-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 230K |
| 代理商： | 2SB824G-Q-T60-K |
2SB824
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R208-042.B
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
-60
V
Collector to Emitter Voltage
VCEO
-50
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current
IC
-5
A
Collector Current (Pulse)
ICP
-9
A
SOT-89
500
mW
Collector Dissipation
TO-126
PC
1
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-to-Base Breakdown Voltage
BVCBO
IC =-1mA, IE=0
-60
V
Collector-to-Emitter Breakdown Voltage
BVCEO
IC=-1mA, RBE =∞
-50
V
Emitter-to-Base Breakdown Voltage
BVEBO
IC =0, IE=-1mA
-6
V
Collector Cut-Off Current
ICBO
VCB=-40V, IE=0
-0.1
mA
Emitter Cut-Off Current
IEBO
VEB=-4V, IC=0
-0.1
mA
hFE1
VCE=-2V, IC=-1A
70
360
DC Current Gain
hFE2
VCE=-2V, IC=-3A
30
Gain Bandwidth Product
fT
VCE =-5V, IC =-1A
30
MHZ
Output Capacitance
Cob
VCB =-10V, f=1MHz
100
pF
Collector-to-Emitter Saturation Voltage
VCE(SAT) IC=-3A, IB=-0.3A
-0.4
V
Turn-ON Time
tON
See specified test circuit
0.1
μs
Storage Time
tSTG
See specified test circuit
1.4
μs
Fall Time
tF
See specified test circuit
0.2
μs
CLASSIFICATION of hFE1
RANK
Q
R
S
RANGE
70-140
100-200
180-360
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SB824G-X-AB3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP PLANAR SILICON TRANSISTOR |
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| 2SB824L-X-AB3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP PLANAR SILICON TRANSISTOR |
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| 2SB824L-X-TM3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP PLANAR SILICON TRANSISTOR |
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