參數(shù)資料
型號(hào)： 2SB791
廠商： Hitachi,Ltd.
英文描述： Silicon PNP Epitaxial
中文描述： 硅外延進(jìn)步黨
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 37K
代理商： 2SB791
2SB791(K)
2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
–120
—
—
V
I
C
= –25 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
–7
—
—
V
I
E
= –50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
V
CE(sat)(1)
V
CE(sat)(2)
V
BE(sat)(1)
V
BE(sat)(2)
t
on
t
stg
t
f
—
—
–100
μ
A
μ
A
V
CB
= –120 V, I
E
= 0
V
CE
= –100 V, R
BE
=
∞
V
CE
= –3 V, I
C
= –4 A*
1
I
C
= –4 A, I
B
= –8 mA*
1
I
C
= –8 A, I
B
= –80 mA*
1
I
C
= –4 A, I
B
= –8 mA*
1
I
C
= –8 A, I
B
= –80 mA*
1
I
C
= –4 A, I
B1
= I
B2
= –8 mA
—
—
–10
DC current transfer ratio
1000
—
20000
Collector to emitter saturation
—
—
–1.5
V
voltage
—
—
–3.0
V
Base to emitter saturation
—
—
–2.0
V
voltage
—
—
–3.5
V
Turn on time
—
0.5
—
μ
s
μ
s
μ
s
Storage time
—
1.6
—
Fall time
Note:
—
1.5
—
1. Pulse test
Maximum Collector Dissipation
Curve
60
40
20
0
50
100
150
Case temperature T
C
(
°
C)
C
C
Area of Safe Operation
–30
–10
–3
–1.0
–0.3
C
C
–0.1
–0.03
–1
–10
–100
–1,000
–3
–30
–300
Collector to emitter voltage V
CE
(V)
Ta = 25
°
C
1 Shot Pulse
i
C(peak)
1
μ
s
1
μ
s
I
(Continuous)
DCOpeaion
(
C
2
°
C
1m
相關(guān)PDF資料
PDF描述
2SB791K Silicon PNP Epitaxial
2SB794 PNP SILICON DARLINGTON POWER TRANSISTORS
2SB795 PNP SILICON DARLINGTON POWER TRANSISTORS
2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
2SB799 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB791(K) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SB791K 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-220AB -120V -8A 40W BCE
2SB791K(E) 制造商:Renesas Electronics Corporation 功能描述:
2SB792 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SB792A 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
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