- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄41474 > 2SB772-Q-TM3-T (UNISONIC TECHNOLOGIES CO LTD) 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251 PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SB772-Q-TM3-T |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251 |
| 封裝： | TO-251, 3 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 197K |
| 代理商： | 2SB772-Q-TM3-T |
2SB772
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R213-016,E
ABSOLUTE MAXIMUM RATINGS (Ta = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-5
V
DC
IC
-3
A
Collector Current
Pulse
ICP
-7
A
Base Current
IB
-0.6
A
TO-92NL
0.5
W
Collector Dissipation (Ta=25℃)
TO-251/TO-252/
TO-126/TO-126C
PC
1
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=-100μA, IE=0
-40
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=-1mA, IB=0
-30
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-100μA, IC=0
-5
V
Collector Cut-Off Current
ICBO
VCB=-30V ,IE=0
-1000
nA
Collector Cut-Off Current
ICEO
VCE=-30V ,IB=0
-1000
nA
Emitter Cut-Off Current
IEBO
VEB=-3V, IC=0
-1000
nA
DC Current Gain(Note 1)
hFE1
hFE2
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
30
100
200
150
400
Collector-Emitter Saturation Voltage
VCE(SAT) IC=-2A, IB=-0.2A
-0.3
-0.5
V
Base-Emitter Saturation Voltage
VBE(SAT) IC=-2A, IB=-0.2A
-1.0
-2.0
V
Current Gain Bandwidth Product
fT
VCE=-5V, IC=-0.1A
80
MHz
Output Capacitance
Cob
VCB=-10V, IE=0,f=1MHz
45
pF
Note 1: Pulse test: PW<300μs, Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK
Q
P
E
RANGE
100 ~ 200
160 ~ 320
200 ~ 400
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB772-E-T9N-K | 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SB772G-Q-T6C-K | 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SB772G-E-T9N-K | 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SB772G-Q-TN3-R | 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252 |
| 2SB772G-E-T6C-K | 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB772R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 3A I(C) | TO-126 |
| 2SB772-R | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Silicon Plastic-Encapsulate Transistor |
| 2SB772S | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SB772S_12 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SB772S-AB3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP EPITAXIAL SILICON TRANSISTOR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。