- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄351933 > 2SB767S TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | SC-62 PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SB767S |
| 英文描述： | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | SC-62 |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 80V的五（巴西）總裁| 500mA的一（c）|律師- 62 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | 2SB767S |
1
Transistor
2SB0709A (2SB709A)
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD0601A (2SD601A)
I Features
G High foward current transfer ratio hFE.
G Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
JEDEC:TO–236
2:Emitter
EIAJ:SC–59
3:Collector
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±0.15
0.65
±0.15
3
1
2
0.95
1.9
±
0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4
±0.2
0
to
0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–45
–7
–200
–100
200
150
–55 ~ +150
Unit
V
mA
mW
C
I Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
ICEO
VCBO
VCEO
VEBO
hFE
*
VCE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
VCE = –10V, IB = 0
IC = –10
A, I
E = 0
IC = –2mA, IB = 0
IE = –10A, IC = 0
VCE = –10V, IC = –2mA
IC = –100mA, IB = –10mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–45
–7
160
typ
– 0.3
80
2.7
max
– 0.1
–100
460
– 0.5
Unit
A
V
MHz
pF
*1h
FE Rank classification
Rank
Q
R
S
hFE
160 ~ 260
210 ~ 340
290 ~ 460
Marking Symbol
BQ
BR
BS
Note.) The Part number in the Parenthesis shows conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB774R | Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SB774S | TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SB779Q | Low-Power, SC70/SOT µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SB779R | TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 500MA I(C) | TO-236AB |
| 2SB786FA | 150mA, SOT23, Low-Dropout Linear Regulators with Internal Microprocessor Reset Circuit |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB768 | 制造商:NEC 制造商全稱:NEC 功能描述:PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 |
| 2SB768-AZ(L) | 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SB768-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT PNP 150V 2A 3-Pin(2+Tab) TO-252 T/R Cut Tape |
| 2SB768K | 制造商:NEC 制造商全稱:NEC 功能描述:BJT |
| 2SB768-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。