參數(shù)資料
型號(hào)： 2SB765(K)
元件分類： 功率晶體管
英文描述： POWER TRANSISTOR, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 39K
代理商： 2SB765(K)
2SB765(K)
2
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
–120
—
V
I
C = –25 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–7
—
V
I
E = –50 mA, IC = 0
Collector cutoff current
I
CBO
—
–100
AV
CB = –120 V, IE = 0
I
CEO
—
–10
AV
CE = –100 V, RBE = ∞
DC current transfer ratio
h
FE
1000
—
20000
V
CE = –3 V, IC = –1.5 A*
1
Collector to emitter saturation
voltage
V
CE(sat)1
——–1.5
V
I
C = –1.5 A, IB = –3 mA*
1
V
CE(sat)2
——–3.0
V
I
C = –3 A, IB = –30 mA*
1
Base to emitter saturation
voltage
V
BE(sat)1
——–2.0
V
I
C = –1.5 A, IB = –3 mA*
1
V
BE(sat)2
——–3.5
V
I
C = –3 A, IB = –30 mA*
1
Turn on time
t
on
—
0.8
—
sI
C = –1.5 A, IB1 = –IB2 = –3 mA
Storage time
t
stg
—
3.0
—
s
Fall time
t
f
—
1.5
—
s
Note:
1. Pulse test
0
50
100
150
Case Temperature TC (°C)
Collector
power
dissipation
Pc
(W)
Maximum Collector Dissipation Curve
15
45
30
–0.01
–0.03
–0.1
–0.3
–1.0
–10
–3
Collector to emitter Voltage VCE (V)
Collector
Current
I
C
(A)
–1
–3
–10
–30
–100 –300 –1,000
Area of Safe Operation
iC (peak)
1
s
100
s
1
ms
PW
=
10
ms
DC
Operation
(T
C
=
25
°
C)
Ta = 25
°C
1 Shot pulse
IC (max)
(Continuous)
相關(guān)PDF資料
PDF描述
2SB772-Y 3 A, 30 V, PNP, Si, POWER TRANSISTOR, TO-126
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