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參數(shù)資料
| 型號(hào)： | 2SB740C |
| 英文描述： | TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-92VAR |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 50V五（巴西）總裁| 1A條一（c）|至92VAR |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 29K |
| 代理商： | 2SB740C |
2SB740
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–70
V
Collector to emitter voltage
V
CEO
–50
V
Emitter to base voltage
V
EBO
–6
V
Collector current
I
C
–1
A
Collector power dissipation
P
C
0.9
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–70
—
V
I
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–50
—
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–6
——V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
——
–1
AV
CB = –55 V, IE = 0
Emitter cutoff current
I
EBO
—
–0.2
AV
EB = –6 V, IC = 0
DC current transfer ratio
h
FE*
1
100
—
320
V
CE = –2 V, IC = –0.1 A
Collector to emitter saturation
voltage
V
CE(sat)
—
–0.6
V
I
C = –1 A, IB = –0.1 A
Gain bandwidth product
f
T
—
150
—
MHz
V
CE = –2 V, IC = –10 mA
Collector output capacitance
Cob
—
35
—
pF
V
CB = –10 V, IE = 0,
f = 1 MHz
Note:
1. The 2SB740 is grouped by h
FE as follows.
BC
100 to 200
160 to 320
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SB740CTZ-E | 制造商:Rochester Electronics LLC 功能描述: 制造商:RNS 功能描述: |
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| 2SB744 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR 制造商:NEC Electronics Corporation 功能描述:Bipolar Junction Transistor, PNP Type, TO-126 |
| 2SB744A | 制造商:JMNIC 制造商全稱(chēng):Quanzhou Jinmei Electronic Co.,Ltd. 功能描述:Silicon PNP Power Transistors |
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