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參數(shù)資料
| 型號： | 2SB740 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進步黨 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 30K |
| 代理商： | 2SB740 |
2SB740
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
–70
V
Collector to emitter voltage
–50
V
Emitter to base voltage
–6
V
Collector current
–1
A
Collector power dissipation
0.9
W
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–70
—
—
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–50
—
—
V
I
C
= –1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
–6
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
—
—
–1
μ
A
μ
A
V
CB
= –55 V, I
E
= 0
V
EB
= –6 V, I
C
= 0
V
CE
= –2 V, I
C
= –0.1 A
I
C
= –1 A, I
B
= –0.1 A
Emitter cutoff current
—
—
–0.2
DC current transfer ratio
100
—
320
Collector to emitter saturation
voltage
—
—
–0.6
V
Gain bandwidth product
f
T
Cob
—
150
—
MHz
V
CE
= –2 V, I
C
= –10 mA
V
= –10 V, I
E
= 0,
f = 1 MHz
Collector output capacitance
—
35
—
pF
Note:
B
1. The 2SB740 is grouped by h
FE
as follows.
C
100 to 200
160 to 320
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB740B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SB740BTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB740C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SB740CTZ-E | 制造商:Rochester Electronics LLC 功能描述: 制造商:RNS 功能描述: |
| 2SB742 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-126 -20V -2A 10W ECBC |
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