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參數(shù)資料
| 型號(hào)： | 2SB739CTZ-E |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | SC-51, TO-92MOD, 3 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 161K |
| 代理商： | 2SB739CTZ-E |
2SB739
Rev.2.00 Aug 10, 2005 page 3 of 5
Main Characteristics
150
100
50
Ambient Temperature Ta (°C)
0
1.2
0.8
0.4
Maximum Collector Dissipation Curve
Collector
Power
Dissipation
P
C
(W)
–2
–6
–10
–4
–8
Collector to Emitter Voltage VCE (V)
–100
–80
–60
–40
–20
0
Typical Output Characteristics (1)
Collector
Current
I
C
(mA)
–0.35
–0.3
–0.25
–0.2
–0.15
–0.1
–0.05 mA
IB = 0
–0.4
–1.2
–2.0
–0.8
–1.6
Collector to Emitter Voltage VCE (V)
–2.0
–1.6
–1.2
–0.8
–0.4
0
Typical Output Characteristics (2)
Collector
Current
I
C
(A)
–25 –20
–15
–10
–5 mA
P
C
= 0.9W
0
–0.2
–0.4
–0.6
–0.8
–1.0
Base to Emitter Voltage VBE (V)
–1
–10
–3
–30
–100
–300
–1,000
Typical Transfer Characteristics
Collector
Current
I
C
(mA)
–25
25
VCE = –2 V
Pulse
Ta = 75
°C
–1
–3
–10
–30
–100 –300 –1,000
Collector Current IC (mA)
10
100
30
300
1,000
3,000
10,000
DC Current Transfer Ratio vs.
Collector Current
DC
Current
Transfer
Ratio
h
FE
Pulse
VCE = –2V
Ta = 75
°C
25
–25
–3
–10
–30
–100 –300 –1,000 –3,000
Collector Current IC (mA)
–0.003
–0.03
–0.01
–0.1
–0.3
–1.0
–3.0
Saturation Voltage vs.
Collector Current
Collector
to
Emitter
Saturation
Voltage
V
EC
(sat)
(V)
Base
to
Emitter
Saturation
Voltage
V
BE
(sat)
(V)
VBE (sat)
VCE (sat)
Pulse
IC = 10 IB
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB740 | 制造商:TRSYS 制造商全稱:Transys Electronics 功能描述:Plastic-Encapsulated Transistors |
| 2SB740B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SB740BTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SB740C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SB740CTZ-E | 制造商:Rochester Electronics LLC 功能描述: 制造商:RNS 功能描述: |
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