參數資料
型號: 2SB739
廠商: Hitachi,Ltd.
英文描述: Silicon PNP Epitaxial
中文描述: 硅外延進步黨
文件頁數: 3/6頁
文件大?。?/td> 31K
代理商: 2SB739
2SB738, 2SB739
3
150
100
50
Ambient Temperature Ta (
°
C)
0
1.2
0.8
0.4
Maximum Collector Dissipation Curve
C
C
–2
–6
–10
–4
–8
Collector to Emitter Voltage V
CE
(V)
–100
–80
–60
–40
–20
0
Typical Output Characteristics (1)
C
C
–035
–03
–0.25
–0.2
–0.15
–0.1
–0.05 mA
I
B
= 0
–0.4
–1.2
–2.0
–0.8
–1.6
Collector to Emitter Voltage V
CE
(V)
–2.0
–1.6
–1.2
–0.8
–0.4
0
Typical Output Characteristics (2)
C
C
–25 –20
–15
–10
–5 mA
P
C
= 0.9W
0
–0.2
–0.4
–0.6
–0.8
–1.0
Base to Emitter Voltage V
BE
(V)
–1
–10
–3
–30
–100
–300
–1,000
Typical Transfer Characteristics
C
C
–25
25
V
= –2 V
Pulse
Ta = 75
°
C
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