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參數(shù)資料
| 型號： | 2SB738 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Epitaxial |
| 中文描述： | 硅外延進(jìn)步黨 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 31K |
| 代理商： | 2SB738 |
2SB738, 2SB739
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
2SB738
2SB739
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
–20
–20
V
Collector to emitter voltage
–16
–20
V
Emitter to base voltage
–6
–6
V
Collector current
–2
–2
A
Collector power dissipation
0.9
0.9
W
Junction temperature
150
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
–55 to +150
Electrical Characteristics
(Ta = 25°C)
2SB738
2SB739
Item
Symbol Min
Typ
Max
Min
Typ
Max Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–20
—
—
–20
—
—
V
I
C
= –10
μ
A, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–16
—
—
–20
—
—
V
I
C
= –1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
–6
—
—
–6
—
—
V
I
E
= –10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
I
EBO
h
FE
*
1
V
CE(sat)
—
—
–2
—
—
–2
μ
A
V
CB
= –16 V, I
E
= 0
V
EB
= –6 V, I
C
= 0
V
CE
= –2 V, I
C
= –0.1 A
I
C
= –1 A, I
B
= –0.1 A
Emitter cutoff current
—
—
–0.2
—
—
–0.2
μ
A
DC current transfer ratio
100
—
320
100
—
320
Collector to emitter
saturation voltage
—
—
–0.3
—
—
–0.3 V
Gain bandwidth product
f
T
—
150
—
—
150
—
MHz V
CE
= –2 V, I
C
= –10 mA
pF
V
= –10 V, I
E
= 0,
f = 1 MHz
Collector output capacitance Cob
—
50
—
—
50
—
Note:
B
1. The 2SB738 and 2SB739 are grouped by h
FE
as follows.
C
100 to 200
160 to 320
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB738B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 2A I(C) | TO-92VAR |
| 2SB738C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 2A I(C) | TO-92VAR |
| 2SB739 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB739B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 2A I(C) | TO-92VAR |
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