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參數(shù)資料
| 型號(hào)： | 2SB716 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 封裝： | TO-92MOD, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 31K |
| 代理商： | 2SB716 |
2SB715, 2SB716, 2SB716A
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SB715
2SB716
2SB716A
Unit
Collector to base voltage
V
CBO
–100
–120
–140
V
Collector to emitter voltage
V
CEO
–100
–120
–140
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–50
mA
Collector power dissipation
P
C
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SB715
2SB716
2SB716A
Item
Symbol Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–100 —
—
–120 —
—
–140 —
—
V
I
C = –10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–100 —
—
–120 —
—
–140 —
—
V
I
C = –1 mA,
R
BE = ∞
Collector cutoff current
I
CBO
—
–0.5
—
AV
CB = –80 V, IE = 0
—
–0.5
—
–0.5
AV
CB = –100 V, IE = 0
DC current transfer ratio h
FE1*
1
250
—
800
250
—
800
250
—
500
V
CE = –12 V,
I
C = –2 mA
h
FE2
125
—
125
—
125
—
V
CE = –12 V,
I
C = –10 mA
Base to emitter voltage
V
BE
—
–0.75 —
—
–0.75 —
—
–0.75 V
V
CE = –12 V,
I
C = –2 mA
Collector to emitter
saturation voltage
V
CE(sat)
—
–0.2
—
–0.2
—
–0.2
V
I
C = –10 mA,
I
B = –1 mA
Gain bandwidth product f
T
—
150
—
150
—
150
—
MHz V
CE = –12 V,
I
C = –5 mA
Collector output
capacitance
Cob
—
1.8
—
1.8
—
1.8
—
pF
V
CB = –25 V, IE = 0,
f = 1 MHz
Note:
1. The 2SB715, 2SB716 and 2SB716A are grouped by h
FE1 as follows.
DE
2SB715, 2SB716 250 to 500
400 to 800
2SB716A
250 to 500
—
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB715D | SMALL SIGNAL TRANSISTOR |
| 2SB715ETZ | 50 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB716ETZ | 50 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB716ADTZ | 50 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB716ADTZ | 50 mA, 140 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB716A | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon PNP Epitaxial |
| 2SB716AD | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB716D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR |
| 2SB716E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR |
| 2SB717 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB757 and 2SB758 |
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