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參數(shù)資料
| 型號： | 2SB648C |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TO-126MOD, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SB648C |
2SB648, 2SB648A
2
Electrical Characteristics (Ta = 25
°C)
2SB648
2SB648A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–180 —
—
–180 —
—
V
I
C = –10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–120 —
—
–160 —
—
V
I
C = –1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
——
–5
——V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
—
–10
—
–10
AV
CB = –160 V, IE = 0
DC current transfer
ratio
h
FE1*
1
60
—
320
60
—
200
V
CE = –5 V,
I
C = –10 mA
h
FE2
30
—
30
—
V
CE = –5 V, IC = –1 mA
Collector to emitter
saturation voltage
V
CE(sat)
——–2
V
I
C = –30 mA,
I
B = –3 mA
Base to emitter voltage V
BE
——–1.5
V
CE = –5 V,
I
C = –10 mA
Gain bandwidth product f
T
—
140
—
140
—
MHz
V
CE = –10 V,
I
C = –10 mA
Collector output
capacitance
Cob
—
4.5
—
4.5
—
pF
V
CB = –10 V, IE = 0,
f = 1 MHz
Note:
1. The 2SB648 and 2SB648A are grouped by h
FE1 as follows.
BCD
2SB648
60 to 120
100 to 200
160 to 320
2SB648A
60 to 120
100 to 200
—
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB648D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-126VAR |
| 2SB649 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:PNP Epitaxial Planar Transistors |
| 2SB649_09 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649_11 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SB649A | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:PNP Epitaxial Planar Transistors |
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