參數(shù)資料
型號(hào): 2SB647DTZ-E
元件分類: 小信號(hào)晶體管
英文描述: 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: SC-51, TO-92 MOD, 3 PIN
文件頁數(shù): 4/8頁
文件大?。?/td> 184K
代理商: 2SB647DTZ-E
2SB647, 2SB647A
Rev.2.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
2SB647
2SB647A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–120
–120
V
IC = –10
A, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–80
–100
V
IC = –1 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO
–5
–5
V
IE = –10
A, IC = 0
Collector cutoff current
ICBO
–10
–10
A
VCB = –100 V, IE = 0
DC current transfer ratio
hFE1*
1
60
320
60
200
VCE = –5 V,
IC = –150 mA*
2
hFE2
30
30
VCE = –5 V,
IC = –500 mA*
2
Collector to emitter
saturation voltage
VCE(sat)
–1
–1
V
IC = –500 mA,
IB = –50 mA*
2
Base to emitter voltage
VBE
–1.5
–1.5
V
VCE = –5 V,
IC = –150 mA*
2
Gain bandwidth product
fT
140
140
MHz
VCE = –5 V,
IC = –150 mA
Collector output
capacitance
Cob
20
20
pF
VCB = –10 V, IE = 0
f = 1 MHz
Notes: 1. The 2SB647 and 2SB647A are grouped by hFE1 as follows.
2. Pulse test
B
C
D
2SB647
100 to 200
160 to 320
2SB647A
60 to 120
100 to 200
相關(guān)PDF資料
PDF描述
2SB647CTZ-E 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SB647ABTZ-E 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SB647ACTZ-E 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SB649 1500 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB649 1500 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB648 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:LOW FREQUENCY HIGH VOLTAGE AMPLIFIER
2SB648A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SB648AB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 50MA I(C) | TO-126VAR
2SB648AC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 50MA I(C) | TO-126VAR
2SB648AD 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT