參數(shù)資料
型號: 2SB647D
元件分類: 小信號晶體管
英文描述: SMALL SIGNAL TRANSISTOR
封裝: TO-92MOD, 3 PIN
文件頁數(shù): 4/6頁
文件大?。?/td> 31K
代理商: 2SB647D
2SB647, 2SB647A
4
Saturation Voltage
vs. Collector Current
Collector Current IC (mA)
Base
to
emitter
saturation
voltage
V
BE(sat)
(V)
IC = 10 IB
Pulse
Ta = –25
°C
75
25
–25
Ta = 75
°C
VCE(sat)
VBE(sat)
–1.2
–1.0
–0.8
–0.6
–0.4
–0.2
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V)
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
0
–1
–3
–10
–30
–100 –300 –1,000
Gain Bandwidth Product
vs. Collector Current
VCE = –5 V
240
200
160
120
80
40
0
–10
–30
–100
–300
–1,000
Collector Current IC (mA)
Gain
bandwidth
product
f
T
(MHz)
Collector Output Capacitance vs.
Collector to Base Voltage
–1
200
100
50
20
10
5
2
–2
–5
–10
Collector to Base Voltage VCB (V)
Collector
output
capacitance
C
ob
(pF)
–50
–20
–100
f = 1 MHz
IE = 0
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SB647DTZ-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial
2SB648 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:LOW FREQUENCY HIGH VOLTAGE AMPLIFIER
2SB648A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SB648AB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 50MA I(C) | TO-126VAR
2SB648AC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 50MA I(C) | TO-126VAR