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參數(shù)資料
| 型號： | 2SB595 |
| 廠商： | 永盛國際集團 |
| 英文描述： | LOW FREQUENCY POWER AMPLIFIER(PNP EPITAXUAL) |
| 中文描述： | 低頻功率放大器（進步黨EPITAXUAL） |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 69K |
| 代理商： | 2SB595 |
2SB595
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
TO-220
!
Complement to 2SD525
ABSOLUTE MAXIMUM RATINGS (T
A
=25
℃
)
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation (Tc=25
℃
)
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
Tstg
-100
-100
-5
-5
40
150
-50~150
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
A
=25
℃
)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product
I
CBO
I
EBO
h
FE1
V
CE(sat)
f
T
V
CB
= -100V , I
E
=0
V
EB
=- 5V , I
C
=
0
V
CE
= -5V , I
C
=-1A
I
C
=-4A , I
B
=-0.4A
V
CE
= -5V , I
C
=-0.5A
40
8
-10
10
320
-2.0
μ
A
μ
A
V
M
HZ
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB601K | TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220AB |
| 2SB601L | TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220AB |
| 2SB601M | TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220AB |
| 2SB601 | PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 2SB605 | PNP SILICON TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB595R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SB595Y | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SB596 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| 2SB596O | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB |
| 2SB596-O | 制造商:Toshiba America Electronic Components 功能描述: |
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