參數(shù)資料
型號: 2SB562C
英文描述: TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-92VAR
中文描述: 晶體管|晶體管|進(jìn)步黨| 20V的五(巴西)總裁| 1A條一(c)|至92VAR
文件頁數(shù): 2/6頁
文件大?。?/td> 29K
代理商: 2SB562C
2SB566(K), 2SB566A(K)
2
Electrical Characteristics (Ta = 25°C)
2SB566(K)
2SB566A(K)
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–70
–70
V
I
C = –10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–50
–60
V
I
C = –50 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
–5
–5
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
——–1—
–1
AV
CB = –50 V, IE = 0
DC current tarnsfer ratio h
FE1*
1
60
200
60
200
V
CE = –4 V, IC = –1 A
h
FE2
35
35
V
CE = –4 V, IC = –0.1 A
Collector to emitter
saturation voltage
V
CE(sat)
–1.0
–1.0
V
I
C = –2 A, IB = –0.2 A
Base to emitter
saturation voltage
V
BE(sat)
–1.2
–1.2
V
I
C = –2 A, IB = –0.2 A
Gain bandwidth product f
T
15
15
MHz
V
CE = –4 V, IC = –0.5 A
Turn on time
t
on
0.3
0.3
sV
CC = –10.5 V
Turn off time
t
off
3.0
3.0
sI
C = 10IB1 = –10IB2 =
Storage time
t
stg
2.5
2.5
s
–0.5 A
Note:
1. The 2SB566(K) and 2SB566A(K) are grouped by h
FE1 as follows.
BC
60 to 120
100 to 200
相關(guān)PDF資料
PDF描述
2SB564K TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | TO-221VAR
2SB564L TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | TO-221VAR
2SB564M TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | TO-221VAR
2SB566(K)B TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-220AB
2SB566(K)C TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 4A I(C) | TO-220AB
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